About PileGrowth Tech

About company

Many modern electronic, optoelectronic, photonic and sensing devices require dissimilar materials to be combined in the form of epitaxial layer stacks on top of a substrate comprised of a single crystalline wafer. In general, such materials, including the substrate, have different lattice parameters and thermal expansion coefficients. As a result, serious complications may arise due to deteriorating electrical and optical properties, caused by lattice defects formed during or after the deposition crack formation as a result of temperature changes, causing complete device failure wafer bowing during cooling from the growth temperature, adversely affecting subsequent processing steps (e.g., lithography).